College of Science and Mathematics Distinguished Alumni Award Joint Seminar (Speaker/Forum/Lecture)
This year's recipients of the College of Science and Mathematics Distinguished Alumni Award, Darrell Strobel and Harold Korb, will present a joint seminar on Wednesday (March 22) 2:00-3:30pm in Minard 230. Prior to the seminar, Dean Wood will present the awards.
The first talk is:
Darrell F. Strobel, Johns Hopkins University The New Horizons Mission to Pluto
Abstract: On 19 January 2006, NASA launched its first mission to Pluto the ninth planet. Called New Horizons Mission, its spacecraft is only the size of a grand piano and operated on just 200 Watts of power. At launch it was one of the fastest spacecraft to leave the Earth and made the trip to Pluto in a mere 9 ½ years. In this talk I will discuss the early history of the mission, the launch, the planning of mission operations and the remarkable scientific return from this largest known Kuiper-belt object during the 14 July 2015 flyby. At the end of the talk I will be open to discuss: the ninth planet at launch and a dwarf planet at arrival and more than a frozen water ice ball. New Horizons will study Kuiper Belt object 2014 MU69 during a flyby on 1 January 2019.
Followed by the second talk:
Harold Korb, Korb Consulting, LLC
From Wheat Fields to Watt Fields Links in the Silicon Food Chain
The phenomenal advances in electronics in the past 70 years since the invention of the transistor have been driven by the exquisite understanding of the basic physics of semiconductors and semiconductor devices and by the creativity and investment in new technology in the semiconductor device industry. Less publicized is the role played by the availability of silicon wafers engineered and optimized to enable the economical fabrication of all silicon-based devices. For the first 25 years of this era, the emphasis was on making defect-free silicon with electronic (chemical) properties tailored to each application. Since then, it has become essential to create families of defects in the silicon and to engineer the defect properties for each application. I will describe the physics and engineering involved in creating and controlling these families of defects.
Sylvio May firstname.lastname@example.org
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